| Ident. | Authors (with country if any) | Title |
|---|
| 002121 |
| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes |
| 002211 |
| Wavelength tuning in GaAs/AlGaAs quantum wells by InAs submonolayer insertion |
| 002338 |
| Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance-voltage profiling and deep-level transient spectroscopy techniques |
| 002347 |
| Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth |
| 002349 |
| Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots |
| 002540 |
| Two-dimensional excitonic emission in InAs submonolayers |
| 002553 |
| Effective-mass theory for InAs/GaAs strained coupled quantum dots |
| 002554 |
| Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates |
| 002622 |
| Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown the molecular beam epitaxy and hydrogen treatment |
